Polaron Transport in the Paramagnetic Phase of Electron-Doped Manganites

The electrical resistivity, Hall coefficient, and thermopower as functions of temperature are reported for lightly electron-doped Ca(1-x)La(x)MnO(3)(0 <= x <= 0.10). Unlike the case of hole-doped ferromagnetic manganites, the magnitude and temperature dependence of the Hall mobility for these compounds is found to be inconsistent with small-polaron theory. The transport data are better described by the Feynman polaron theory and imply intermediate coupling (alpha \~ 5.4) with a band effective mass, m*~4.3 m_0, and a polaron mass, m_p ~ 10 m_0.Comment: 7 pp., 7 Fig.s, to be published, PR

Effect of high-K dielectrics on charge transport in graphene

The effect of various dielectrics on charge mobility in single layer graphene is investigated. By calculating the remote optical phonon scattering arising from the polar substrates, and combining it with their effect on Coulombic impurity scattering, a comprehensive picture of the effect of dielectrics on charge transport in graphene emerges. It is found that though high-$\kappa$ dielectrics can strongly reduce Coulombic scattering by dielectric screening, scattering from surface phonon modes arising from them wash out this advantage. By comparing the room-temperature transport properties with narrow-bandgap III-V semiconductors, strategies to improve the mobility in single layer graphene are outlined.Comment: 6 pages, 4 Figure

Marginality of bulk-edge correspondence for single-valley Hamiltonians

We study the correspondence between the non-trivial topological properties associated with the individual valleys of gapped bilayer graphene (BLG), as a prototypical multi-valley system, and the gapless modes at its edges and other interfaces. We find that the exact connection between the valley-specific Hall conductivity and the number of gapless edge modes does not hold in general, but is dependent on the boundary conditions, even in the absence of intervalley coupling. This non-universality is attributed to the absence of a well-defined topological invariant within a given valley of BLG; yet, a more general topological invariant may be defined in certain cases, which explains the distinction between the BLG-vacuum and BLG-BLG interfaces.Comment: 7 pages, 4 figure

Proposal for manipulating and detecting spin and orbital states of trapped electrons on helium using cavity quantum electrodynamics

We propose to couple an on-chip high finesse superconducting cavity to the lateral-motion and spin state of a single electron trapped on the surface of superfluid helium. We estimate the motional coherence times to exceed 15 microseconds, while energy will be coherently exchanged with the cavity photons in less than 10 nanoseconds for charge states and faster than 1 microsecond for spin states, making the system attractive for quantum information processing and cavity quantum electrodynamics experiments. Strong interaction with cavity photons will provide the means for both nondestructive readout and coupling of distant electrons.Comment: 4 pages, 3 figures, supplemental material

Identification of main contributions to conductivity of epitaxial InN

Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is studied. Transport parameters of the surface layer are determined from the Shubnikov-de Haas oscillations measured in undoped and Mg-doped InN films at magnetic fields up to 63 T. It is shown that the In nanoparticles, near-interface and bulk layers play the dominant role in the electrical conductivity of InN, while influence of the surface layer is pronounced only in the compensated low-mobility InN:Mg films

Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells

We have studied the effect of nonequilibrium longitudinal optical phonons on hot-electron spin relaxation in $n$-type GaAs quantum wells. The longitudinal optical phonons, due to the finite relaxation rate, are driven to nonequilibrium states by electrons under an in-plane electric field. The nonequilibrium phonons then in turn influence the electron spin relaxation properties via modifying the electron heating and drifting. The spin relaxation time is elongated due to the enhanced electron heating and thus the electron-phonon scattering in the presence of nonequilibrium phonons. The frequency of spin precession, which is roughly proportional to the electron drift velocity, can be either increased (at low electric field and/or high lattice temperature) or decreased (at high electric field and/or low lattice temperature). The nonequilibrium phonon effect is more pronounced when the electron density is high and the impurity density is low.Comment: 6 pages, 3 figure

Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films

We establish the dominant effect of anisotropic weak localization (WL) in three dimensions associated with a propagative Fermi surface, on the conductivity correction in heavily nitrogen doped ultrananocrystalline diamond (UNCD) films based on magneto-resistance studies at low temperatures. Also, low temperature electrical conductivity can show weakly localized transport in 3D combined with the effect of electron-electron interactions in these materials, which is remarkably different from the conductivity in 2DWL or strong localization regime. The corresponding dephasing time of electronic wavefunctions in these systems described as ~ T^-p with p < 1, follows a relatively weak temperature dependence compared to the generally expected nature for bulk dirty metals having $p \geq 1$. The temperature dependence of Hall (electron) mobility together with an enhanced electron density has been used to interpret the unusual magneto-transport features and show delocalized electronic transport in these n-type UNCD films, which can be described as low-dimensional superlattice structures.Comment: 27 pages, 6 figures, To be published in Physical Review